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| BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value V CBO V CEV V CEO V EBO IC I CM IB P tot T stg Tj Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature 120 120 100 6 10 15 2 60 -65 to 175 175 V V V V A A A W o o C C June 1997 1/4 BDY90 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CBO V CE = V CEV T case = 150 o C V CE = V CEV V EB = 6 V I C = 100 mA Min. Typ. Max. 1 1 3 1 Unit mA mA mA mA V I EBO V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain 100 IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 1 A IC = 5 A I C = 10 A I C = 0.5 A f = 5 MHz IC = 5 A V CC = 30 V IC = 5 A V CC = 30 V I B = 0.5 A IB = 1 A I B = 0.5 A IB = 1 A V CE = 2 V V CE = 5 V V CE = 5 V V CE = 5 V I B1 = 0.5 A I B1 = -I B2 = 0.5 A 30 30 20 70 0.5 1.5 1.2 1.5 120 V V V V ft t on ts tf Transition-Frequency Turn-on Time Storage Time Fall Time MHz 0.35 1.3 0.2 s s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BDY90 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BDY90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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